Scientists have made a breakthrough toward creating nanocircuitry on graphene, widely regarded as the most promising candidate to replace silicon as the building block of transistors. They have devised a simple and quick one-step process based on thermochemical nanolithography (TCNL) for creating nanowires, tuning the electronic properties of reduced graphene oxide on the nanoscale and thereby allowing it to switch from being an insulating material to a conducting material.
The technique works with multiple forms of graphene and is poised to become an important finding for the development of graphene electronics. The research is published in the Science journal. Scientists who work with nanocircuits are enthusiastic about graphene because electrons meet with less resistance when they travel along graphene compared to silicon and because today’s silicon transistors are nearly as small as allowed by the laws of physics. Graphene also has the edge due to its thickness – it’s a carbon sheet that is a single atom thick. While graphene nanoelectronics could be faster and consume less power than silicon, no one knew how to produce graphene nanostructures on such a reproducible or scalable method. That is until now.